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best Samsung 850 EVO
best Samsung 850 EVO
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2017-05-26 11:06 Reply
best Samsung 850 EVO 4TB 2.5-Inch SATA III Internal SSD price in China

In 2017 Samsung brought 3D NAND (branded as V-NAND) to the consumer SSD market with the 850 Pro and 850 EVO SATA SSDs. Based on the MLC and TLC versions respectively of Samsung’s 32-layer second-generation V-NAND process, both models raised the bar for SSD performance and remain essentially unchallenged except by PCIe SSDs. The 850 EVO in particular defies the usual image of TLC SSDs as being relatively slow, power-hungry, and susceptible to problems with long-term data retention or write endurance. Most TLC drives are low-end or at best mid-range in the SATA market, but the 850 EVO for the most part competes against MLC drives in the mid to high end of the market.

best Samsung 850 EVO 4TB 2.5-Inch SATA III Internal SSD price in China

Wholesale Price:$254

Last year, the 850 Pro and EVO lines were expanded with 2TB models based on an upgraded controller with support for the larger quantities of DRAM required to keep track of so much NAND flash memory. The 2TB 850 Pro introduced a 128Gb die version of Samsung’s 32-layer MLC V-NAND to replace the 86Gb die used by the smaller 850 Pros. However the 2TB 850 EVO continued to use the same 128Gb TLC V-NAND as in the smaller capacities.

Later in 2015, Samsung announced their third-generation 48-layer V-NAND process to provide 256Gb MLC and TLC parts. The plan was to switch existing products like the 850 and 950 series SSDs over to the new V-NAND beginning in early 2016 and to introduce the higher capacities it enables. The transition to the newer V-NAND has not been as quick as originally planned, but we have seen it show up in the Portable SSD T3 and the 1TB 850 EVO M.2 that has recently become available.

The 48-layer V-NAND is now coming to the 2.5″ 850 EVO line in the form of a new 4TB model. It turns out that the MHX controller introduced for the 2TB models supports 4GB of DRAM, so the new 4TB 850 EVO only required changing the NAND, bumping up to a higher-capacity DRAM chip, and a firmware revision. The rest of the drive—controller, PCB, and case—are identical to the 2TB model. It is a general rule that larger SSDs tend to be faster, but as we saw when the 2TB 850s showed up, the SATA interface doesn’t leave much room for improvement and the overhead of managing more flash can sometimes slightly hurt performance. It’s no surprise then that the performance specifications of the 4TB model are identical to that of the 500GB, 1TB and 2TB models. The idle power consumption rating of the 4TB 850 EVO is slightly higher than the 2TB model (likely due to the increased DRAM), but the new V-NAND gives the 4TB 850 EVO substantially lower active power consumption ratings than any previous capacity.

Samsung SSD 850 EVO Specifications
Capacity120GB250GB500GB1TB (1000GB)2TB (2000GB)4TB (4000GB)
NANDSamsung 32-layer 128Gbit TLC V-NANDSamsung 48-layer 256Gbit TLC V-NAND
Sequential Read540MB/s
Sequential Write (max)520MB/s
Sequential Write (non-TurboWrite)150MB/s300MB/s500MB/s
4KB Random Read (QD32)94K IOPS97K IOPS98K IOPS
4KB Random Write (QD32)88K IOPS90K IOPS
4KB Random Read (QD1)10K IOPS
4KB Random Write (QD1)38K IOPS40K IOPS
DevSleep Power2mW2mW2mW4mW5mW10mW
Slumber Power50mW60mW70mW
Active Power (Read/Write)3.7W / 4.4W3.7W / 4.7W3.1W / 3.6W
EncryptionAES-256, TCG Opal 2.0, IEEE-1667 (eDrive)
WarrantyFive years

The one disappointment in the specifications for the 4TB 850 EVO is the write endurance rating, still the same 300TB total as the 2TB model. A warranty that expires after only 75 drive writes is concerning even if the total bytes written quantity has been reasonable in the past. It can come across as an indication that Samsung lacks confidence in their new V-NAND, which is at odds with the 5-year warranty the drive carries. For comparison, Samsung’s enterprise PM863 based on the older 32-layer TLC V-NAND has a three year warranty but a 5600TB endurance rating for its 3.84TB model. Fortunately, it appears that the write endurance rating of the 4TB 850 EVO is very conservative: the testing subjected it to a total of around 7 drive writes but the SMART lifetime indicator is down to only 99% rather than the 90 or 91% implied by the 300TBW rating.

Meanwhile thanks to TechInsights, we know a bit about what makes it possible for Samsung’s third generation V-NAND to offer higher capacities that are both more power efficient and more cost-effective. In addition to raising the layer count from 32 to 48, Samsung has tweaked several aspects of the design. The NAND cells still use a charge-trap design (in contrast to the floating gate used by planar NAND flash), but with some dimensions reduced, an extra metal interconnect layer, and more compact logic and I/O regions on the die. The net effect is that density has increased from about 1.86 Gb/mm^2 for the 32-layer TLC to about 2.6 Gb/mm^2 for the 48-layer TLC in this 4TB 850 EVO.

Another trick up Samsung’s sleeve is the use of F-Chips, an idea they presented at ISSCC 2015. The F-Chips serve a similar purpose to the buffers on FB-DIMMs for DRAM: rather than directly connect the SSD controller to a stack of NAND dies using a multidrop bus, the F-Chip is an interface chip that is connected to the SSD controller, and it in turn connects to two groups of four NAND dies. Because the tiny F-Chip inhabits the same BGA package as the stack of NAND and because its connections to the NAND are shared across only four chips instead of 8 or 16, maintaining signal integrity is much less of a problem. Likewise, the sharing of the bus between the NAND package and the SSD controller is reduced or eliminated.

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